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產(chǎn)品

Part Number	Package	Band(MHz)	Ppeak(W)	Pout(dBm)	Eff@Pout(%)	Power Gain(dB)	Status
DXG2CH50A-450EF*	780P2	4800~5000	450	47.5	43.0	12.0	Engineering Sample
DXG2MH50A-50N*	LGA 6mm×10mm	4700~5000	50	38.8	40.5	28.0	Released Product
DXG1PH60B-10N2*	DFN 4mm×4mm	DC~6000	10	34.0	32.0	20.0	Released Product
DXG1CH25P-320EF	780P2	2435~2465	320	55.0	75.0	14.0	Released Product
D2J080DH2
D2J325DB2
D2J185DE2
D2J160DH2
D2J140DE2
D2J090DE2
D2J070DH2
D2H620DE1
D2H500DE1
D2H400DE1
DXG1CH08A-540EF*	780P2	758~821	540	49.0	58.0	18.0	Released Product
D2H320DB1
D2H320DE1
D2H290DE1
DXG2CH22A-520EF*	780P2	2110~2170	510	49.0	58.2	14.8	Released Product
D2H235DE1

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DXG2CH50A-450EF*

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	4800	MHz
Frequency (Max.)	5000	MHz
Supply Voltage (Typ.)	52	V
Psat (Typ.)	56.6	dBm
Power Gain @ 4900 MHz	11.8	dB
Efficiency @ 4900 MHz	42.6	%
ACPR @ 4900 MHz	-34.0/-47.0	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 52 V, I_DQA = 2300 mA, V_GSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG2MH50A-50N*

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	2496	MHz
Frequency (Max.)	2690	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	49.9	dBm
Power Gain @ 2600 MHz	15.9	dB
Efficiency @ 2600 MHz	56.5	%
ACPR @ 2600 MHz	-32.5	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

DXG1PH60B-10N2*

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	DC	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	40.3	dBm
Power Gain @ 3500 MHz	20.2	dB
Efficiency @ 3500 MHz	32.3	%

Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 30 mA.

DXG1CH25P-320EF

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	2400	MHz
Frequency (Max.)	2500	MHz
Supply Voltage (Typ.)	48	V
Psat¹ @ 2435 MHz	55.3	dBm
Power Gain² @ 2435 MHz	14.6	dB
Efficiency² @ 2435 MHz	73.6	%

Note: Above Performance is the typical performance in Dynax's demo with the device soldered onto the heatsink, test condition:V_DS= 50 V, V_GS = - 4.8 V.

D2J080DH2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2J080DH2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	725*2985	mm
典型功率 @6GHz 48V	80	W
效率 @6GHz 48V	73	%
增益 @6GHz 48V	20.6	dB
典型功率 @10GHz 28V	44	W
效率 @10GHz 28V	59	%
增益 @10GHz 28V	15.5	dB

1、效率、增益標識為對應(yīng) 48V 6GHz頻點，最大效率下的仿真數(shù)據(jù)；

仿真測試條件：V_DD = 48 V, I_DQ = 264 mA, 頻率 = 6 GHz

2、效率、增益標識為對應(yīng) 28V 10GHz頻點，最大效率下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 28 V, I_DQ = 264 mA, 頻率 = 10 GHz

D2J325DB2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2J325DB2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	945*6075	mm
典型功率 @6GHz 48V	325	W
效率 @6GHz 48V	61	%
增益 @6GHz 48V	17.3	dB
典型功率 @10GHz 28V	180	W
效率 @10GHz 28V	45	%
增益 @10GHz 28V	9.8	dB

1、效率、增益標識為對應(yīng) 48V 6GHz頻點，最大效率下的仿真數(shù)據(jù)；

仿真測試條件：V_DD = 48 V, I_DQ = 1267 mA, 頻率 = 6 GHz

2、效率、增益標識為對應(yīng) 28V 10GHz頻點，最大效率下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 28 V, I_DQ = 1267 mA, 頻率 = 10 GHz

D2J185DE2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2J185DE2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	920*4250	mm
典型功率 @6GHz 48V	185	W
效率 @6GHz 48V	67	%
增益 @6GHz 48V	18.1	dB
典型功率 @10GHz 28V	100	W
效率 @10GHz 28V	52	%
增益 @10GHz 28V	12.1	dB

1、效率、增益標識為對應(yīng) 48V 6GHz頻點，最大效率下的仿真數(shù)據(jù)；

仿真測試條件：V_DD = 48 V, I_DQ = 697 mA, 頻率 = 6 GHz

2、效率、增益標識為對應(yīng) 28V 10GHz頻點，最大效率下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 28 V, I_DQ = 697 mA, 頻率 = 10 GHz

D2J160DH2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2J0160DH2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	800*4390	mm
典型功率 @6GHz 48V	160	W
效率 @6GHz 48V	69	%
增益 @6GHz 48V	19.6	dB
典型功率 @10GHz 28V	90	W
效率 @10GHz 28V	54	%
增益 @10GHz 28V	13.8	dB

1、效率、增益標識為對應(yīng) 48V 6GHz頻點，最大效率下的仿真數(shù)據(jù)；

仿真測試條件：V_DD = 48 V, I_DQ = 308 mA, 頻率 = 6 GHz

2、效率、增益標識為對應(yīng) 28V 10GHz頻點，最大效率下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 28 V, I_DQ = 308 mA, 頻率 = 10 GHz

D2J140DE2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2J140DE2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	850*3770	mm
典型功率 @6GHz 48V	140	W
效率 @6GHz 48V	70	%
增益 @6GHz 48V	18.4	dB
典型功率 @10GHz 28V	75	W
效率 @10GHz 28V	55	%
增益 @10GHz 28V	13.0	dB

1、效率、增益標識為對應(yīng) 48V 6GHz頻點，最大效率下的仿真數(shù)據(jù)；

仿真測試條件：V_DD = 48 V, I_DQ =497 mA, 頻率 = 6 GHz

2、效率、增益標識為對應(yīng) 28V 10GHz頻點，最大效率下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 28 V, I_DQ = 497 mA, 頻率 = 10 GHz

D2J090DE2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2J090DE2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	790*2835	mm
典型功率 @6GHz 48V	90	W
效率 @6GHz 48V	73	%
增益 @6GHz 48V	18.9	dB
典型功率 @10GHz 28V	50	W
效率 @10GHz 28V	58	%
增益 @10GHz 28V	13.7	dB

1、效率、增益標識為對應(yīng) 48V 6GHz頻點，最大效率下的仿真數(shù)據(jù)；

仿真測試條件：V_DD = 48 V, I_DQ =308 mA, 頻率 = 6 GHz

2、效率、增益標識為對應(yīng) 28V 10GHz頻點，最大效率下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 28 V, I_DQ = 308 mA, 頻率 = 10 GHz

D2J070DH2

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2J070DH2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	655*2725	mm
典型功率 @6GHz 48V	70	W
效率 @6GHz 48V	73	%
增益 @6GHz 48V	20.5	dB
典型功率 @10GHz 28V	38	W
效率 @10GHz 28V	60	%
增益 @10GHz 28V	15.5	dB

1、效率、增益標識為對應(yīng) 48V 6GHz頻點，最大效率下的仿真數(shù)據(jù)；

仿真測試條件：V_DD = 48 V, I_DQ =227 mA, 頻率 = 6 GHz

2、效率、增益標識為對應(yīng) 28V 10GHz頻點，最大效率下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 28 V, I_DQ = 227 mA, 頻率 = 10 GHz

D2H620DE1

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2H620DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	1445*5870	mm
應(yīng)用電壓	48	V
典型功率	620	W
效率	75	%
增益	18.3	Db

效率和增益指標為對應(yīng)2.6GHz測試頻點、最大效率點下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 48 V, I_DQ = 2400 mA, 頻率 = 2.6 GHz

D2H500DE1

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2H500DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	1225*5900	mm
應(yīng)用電壓	48	V
典型功率	500	W
效率	72	%
增益	18.4	Db

效率和增益指標為對應(yīng)2.6GHz測試頻點、最大效率點下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 48 V, I_DQ = 1872 mA, 頻率 = 2.6 GHz

D2H400DE1

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2H400DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	1065*5900	mm
應(yīng)用電壓	48	V
典型功率	400	W
效率	73	%
增益	19.2	Db

效率和增益指標為對應(yīng)2.6GHz測試頻點、最大效率點下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 48 V, I_DQ = 1488 mA, 頻率 = 2.6 GHz

DXG1CH08A-540EF*

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用方案
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	758	MHz
Frequency (Max.)	821	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	57.0	dBm
Power Gain @ 780 MHz	18.0	dB
Efficiency @ 780 MHz	58.0	%
ACPR @ 780 MHz	-28.0	dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: V_DS = 48 V, I_DQA = 500 mA, V_GSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

D2H320DB1

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2H320DB1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	915*6075	mm
應(yīng)用電壓	48	V
典型功率	320	W
效率	76	%
增益	20.1	Db

效率和增益指標為對應(yīng)2.6GHz測試頻點、最大效率點下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 48 V, I_DQ = 1180 mA, 頻率 = 2.6 GHz

D2H320DE1

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2H320DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	935*5870	mm
應(yīng)用電壓	48	V
典型功率	320	W
效率	76	%
增益	19.3	Db

效率和增益指標為對應(yīng)2.6GHz測試頻點、最大效率點下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 48 V, I_DQ = 1176 mA, 頻率 = 2.6 GHz

D2H290DE1

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2H290DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	955*5795	mm
應(yīng)用電壓	48	V
典型功率	290	W
效率	77	%
增益	20.2	dB

效率和增益指標為對應(yīng)2.6GHz測試頻點、最大效率點下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 48 V, I_DQ = 1056 mA, 頻率 = 2.6 GHz

DXG2CH22A-520EF*

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用方案
應(yīng)用手冊
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	2110	MHz
Frequency (Max.)	2170	MHz
Supply Voltage (Typ.)	48	V
Psat (Typ.)	57.1	dBm
Power Gain @ 2140 MHz	14.8	dB
Efficiency @ 2140 MHz	58.2	%
ACPR @ 2140 MHz	-34.6	dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQA = 200 mA, V_GSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

D2H235DE1

Brief description for the product

數(shù)據(jù)手冊
應(yīng)用手冊

D2H235DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)	值	單位
產(chǎn)品尺寸	835*5440	mm
應(yīng)用電壓	48	V
典型功率	235	W
效率	79	%
增益	20.3	dB

效率和增益指標為對應(yīng)2.6GHz測試頻點、最大效率點下的仿真數(shù)據(jù)

仿真測試條件：V_DD = 48 V, I_DQ = 842 mA, 頻率 = 2.6 GHz

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